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Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.00.2 4.00.2 s Features q q Optimum for RF amplification of FM/AM radios. High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25C) Ratings 30 20 3 20 400 150 -55 ~ +150 Unit V V V mA mW C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Power gain Noise figure (Ta=25C) Symbol VCBO VEBO hFE Cre fT PG NF * Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA VCE = 6V, IC = 1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz min 30 3 40 typ max Unit V V 260 0.72 0.8 1 V pF MHz dB 3.3 5 dB VBE 450 20 650 *h FE Rank classification B 40 ~ 110 C 65 ~ 160 D 100 ~ 260 hFE Rank 1 Transistor PC -- Ta 500 12 Ta=25C 450 10 IB=100A 10 2SC1047 IC -- VCE 12 Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 80A 8 60A 6 40A Collector current IC (mA) 400 VCE=10V 6V 8 6 4 4 2 20A 2 0 0 6 12 18 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 30 VCE=6V 25 25C 100 30 10 3 1 0.3 VCE(sat) -- IC IC/IB=10 360 hFE -- IC VCE=6V Forward current transfer ratio hFE 300 Collector current IC (mA) Ta=75C 20 -25C 240 Ta=75C 25C 120 -25C 15 180 10 Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 5 60 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 1200 Ta=25C 1000 VCB=10V 800 6V 600 120 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 100 2.0 80 1.6 60 1.2 400 40 0.8 200 20 VCE=6V 10V 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 2 Transistor Cob -- VCB 1.2 2SC1047 PG -- IE IE=0 f=1MHz Ta=25C 40 35 f=100MHz Rg=50 Ta=25C VCE=10V 6V 12 NF -- IE f=100MHz Rg=50 Ta=25C Collector output capacitance Cob (pF) 1.0 10 0.8 Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 8 0.6 6 0.4 4 VCE=6V, 10V 0.2 2 0 0 5 10 15 20 25 30 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Emitter current IE (mA) Emitter current IE (mA) bie -- gie 20 18 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V -1 -1mA -4mA IE=-7mA 58 -3 bfe -- gfe Forward transfer susceptance bfe (mS) 10.7 25 0 - 0.4mA -1mA 100 58 10.7 25 yie=gie+jbie VCE=10V 150 -4mA 0 Input susceptance bie (mS) 16 14 12 10 8 6 4 25 58 -1mA IE=- 0.5mA -7mA -2mA 100 100 -20 150 -2mA -2 -40 150 100 -4mA 58 -60 f=15MHz IE=-7mA 100 58 25 -4 100 -80 -5 -100 yfe=gfe+jbfe VCE=10V 0 20 40 60 80 100 2 f=10.7MHz 0 0 3 6 9 12 15 -6 - 0.5 f=150MHz - 0.4 - 0.3 - 0.2 - 0.1 0 -120 Input conductance gie (mS) Reverse transfer conductance gre (mS) Forward transfer conductance gfe (mS) boe -- goe IE=- 0.5mA -1mA 1.2 150 -2mA -4mA 100 Output susceptance boe (mS) 1.0 0.8 -7mA 0.6 58 0.4 25 0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 yoe=goe+jboe VCE=10V Output conductance goe (mS) 3 |
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